The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5057373
Reference33 articles.
1. Recent progress of GaN power devices for automotive applications
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3. Planar Nearly Ideal Edge-Termination Technique for GaN Devices
4. Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates
5. Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
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