In situmeasurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1840111
Reference14 articles.
1. Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
2. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy
3. GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
4. Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy
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