GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119408
Reference18 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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3. Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE
4. Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
5. NH3 as Nitrogen Source in MBE growth of GaN
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