Monitoring the growth of III-nitride materials by plasma assisted molecular beam epitaxy employing diffuse scattering of RHEED-Reference-Cited by-同舟云学术

Monitoring the growth of III-nitride materials by plasma assisted molecular beam epitaxy employing diffuse scattering of RHEED

Published:2020-01 Issue:1 Volume:38 Page:014007
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Sen Sayantani¹,Paul Suchismita¹,Singha Chirantan¹,Saha Anirban²,Das Alakananda²,Guha Roy Pushan²,Pramanik Pallabi³,Bhattacharyya Anirban²

Affiliation:

1. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata 700106, India

2. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009, India

3. Department of Electronics and Telecommunication Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, India

Funder

Office of the Principal Scientific Advisor, Govt. of India

Department of Science and Technology, Ministry of Science and Technology

Science and Engineering Research Board

Ministry of Electronics and Information technology

Council of Scientific and Industrial Research, India

University Grants Commission

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5124048

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