Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2209411
Reference10 articles.
1. Nuclear-magnetic-resonance diffusion simulations in porous media
2. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
3. Film thickness constraints for manufacturable strained silicon CMOS
4. Surface morphology of related GexSi1−xfilms
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1. Structural inhomogeneity in silicon-on-insulator probed with coherent X-ray diffraction;Zeitschrift für Kristallographie;2010-01
2. Characterization of Poly-Si TFTs Using Amorphous SixGey for a Seed Layer;Journal of the Korean Physical Society;2009-05-15
3. Evaluation of SGOI wafer with different concentrations of Ge using pseudo-MOSFET;Journal of the Korean Vacuum Society;2008-03-30
4. High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography;Applied Physics Letters;2007-12-03
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