Evaluation of SGOI wafer with different concentrations of Ge using pseudo-MOSFET
Author:
Publisher
The Korean Vacuum Society
Subject
Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)
Link
http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO200814364664723.pdf
Reference8 articles.
1. Sub-band structure engineering for advanced CMOS channels
2. Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers
3. Thermal annealing effects on the electrical characteristics of the back interface in nano-silicon-on-insulator channel
4. Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography
5. Dependence of Electrical Characteristics on Si Thickness and Ge Concentration for Unstrained Si Grown on Strained SiGe-on-Insulator n-Metal–Oxide–Semiconductor Field-Effect Transistor
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