Dependence of Electrical Characteristics on Si Thickness and Ge Concentration for Unstrained Si Grown on Strained SiGe-on-Insulator n-Metal–Oxide–Semiconductor Field-Effect Transistor-Reference-Cited by-同舟云学术

Dependence of Electrical Characteristics on Si Thickness and Ge Concentration for Unstrained Si Grown on Strained SiGe-on-Insulator n-Metal–Oxide–Semiconductor Field-Effect Transistor

Published:2007-06-06 Issue:6A Volume:46 Page:3324-3329
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shim Tae-Hun,Kim Seong-Je,Park Jea-Gun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films

2. Quantification of the strain in fully relaxed Si/Ge heteroepitaxial films and superlattices via molecular dynamics

3. Strain relaxation kinetics in Si1−xGex/Si heterostructures

4. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3;Journal of the Korean Physical Society;2021-11-30

2. Dislocation sink annihilating threading dislocations in strain-relaxed Si1−xGexlayer;Nanotechnology;2020-01-08

3. Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator;Semiconductor Science and Technology;2013-02-22

4. A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator;Nanotechnology;2011-07-06

5. Capacitor-less memory-cell fabricated on nanoscale unstrained Si layer on strained SiGe layer-on-insulator;Applied Physics Letters;2010-04-19