Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3153986
Reference11 articles.
1. Electrical properties of Schottky barrier formed on as‐grown and oxidized surface of homoepitaxially grown diamond (001) film
2. Carrier transport mechanism of Ohmic contact to p-type diamond
3. Vapour-phase oxidation of diamond surfaces in O2 studied by diffuse reflectance Fourier-transform infrared and temperture-programmed desorption spectroscopy
4. High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition
5. Ohmic contact for p-type diamond without postannealing
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