Ohmic contact for p-type diamond without postannealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2936371
Reference16 articles.
1. Low-resistance p+ layer formation into diamond using heavily B ion implantation
2. Electrical properties of Schottky barrier formed on as‐grown and oxidized surface of homoepitaxially grown diamond (001) film
3. Electric Properties of Metal/Diamond Interfaces Utilizing Hydrogen-Terminated Surfaces of Homoepitaxial Diamonds
4. Origin of Surface Conductivity in Diamond
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