Control of Schottky barrier height in diamond using UV-generated ozone and its effect on barrier inhomogeneity and temperature dependent properties

Author:

Woo Kelly,Malakoutian Mohamadali,Saraswat Devansh,Bian Zhengliang,Hardy Aaron,Muehle Matthias,Grotjohn Timothy A.,Chowdhury Srabanti

Funder

Energy Frontier Research Centers

National Science Foundation

Publisher

Elsevier BV

Reference31 articles.

1. Diamond power devices: state of the art, modelling, figures of merit and future perspective;Donato;J. Phys. D. Appl. Phys.,2020

2. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Woo;Journal of Physics: Materials,2024

3. Diamond semiconductor performances in power electronics applications;Perez;Diam. Relat. Mater.,2020

4. Very High Temperature Operation of Diamond Schottky Diode;Vescan,1997

5. High-temperature characteristics of Ag and Ni/diamond Schottky diodes;Ueda;Diam. Relat. Mater.,2013

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