Diamond semiconductor performances in power electronics applications-Reference-Cited by-同舟云学术

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Diamond semiconductor performances in power electronics applications

Published:2020-12 Issue: Volume:110 Page:108154
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Perez Gaëtan,Maréchal Aurélien,Chicot Gauthier,Lefranc Pierre,Jeannin Pierre-Olivier,Eon David,Rouger Nicolas

Funder

Agence Nationale de la Recherche

Horizon 2020 Framework Programme

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference54 articles.

1. A survey of wide bandgap power semiconductor devices;Millan;IEEE Trans. Power Electron.,2014

2. Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors;Chow;IEEE Trans. Electron Devices,2017

3. S. Fujita, Wide-bandgap semiconductor materials: for their full bloom, Jpn. J. Appl. Phys. 54 (2015).

4. A. Maréchal, N. Rouger, J-C. Crébier, J. Pernot, S. Koizumi, T. Teraji, E. Gheeraert, Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations, Diam. Relat. Mater. 43 (2014) 34–42.

5. Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications;Kawarada;Sci. Rep.,2017

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3. Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study;Langmuir;2024-08-27

4. A Review of Diamond Materials and Applications in Power Semiconductor Devices;Materials;2024-07-11

5. Multiscale Simulation of CVD Diamond Growth on (1 0 0)‐, (1 1 1)‐, and (1 1 0)‐Oriented Faces;physica status solidi (a);2024-07-09

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