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Searching for THz Gunn oscillations in GaN planar nanodiodes

  • Published:2012-06 Issue:11 Volume:111 Page:113705
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:Journal of Applied Physics

Author:

Íñiguez-de-la-Torre A.,Íñiguez-de-la-Torre I.,Mateos J.,González T.,Sangaré P.,Faucher M.,Grimbert B.,Brandli V.,Ducournau G.,Gaquière C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the Gunn Oscillation Effect of GaN HEMT with Field Plate Structure in the Terahertz Frequency Band;Electronics;2024-06-07

2. Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements;IEEE Transactions on Microwave Theory and Techniques;2024

3. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

4. THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes;Applied Physics Letters;2023-09-18
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