Technology aspects of GaN-based diodes for high-field operation-Reference-Cited by-同舟云学术

Technology aspects of GaN-based diodes for high-field operation

Published:2006-10 Issue:4-6 Volume:40 Page:363-368
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mutamba Kabula,Yilmazoglu Oktay,Sydlo Cezary,Mir Mostafa,Hubbard Seth,Zhao G.,Daumiller Ingo,Pavlidis Dimitris

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. GaN Schottky multiplier diodes prepared by electroplating: A study of passivation technology;Cojocari;Semicond. Sci. Tech.,2004

2. Field emission from quantum size GaN whiskers;Yilmazoglu;Appl. Surf. Sci.,2003

3. Large-signal microwave performance of GaN-based NDR diode oscillators;Alekseev;Solid State Electron.,2000

4. K. Mutamba, O. Yilmazoglu, C. Sydlo, D. Pavlidis, M. Mir, S. Hubbard, G. Zhao, I. Daumiller, Technology and characteristics of GaN-based diodes for high-field operation, in: Proc. WOCSDICE 1005, vol. 111

5. E. Alekseev, D. Pavlidis, GaN gunn diodes for THz signal generation, in: Proc. MTT-S International Microwave Symposium, Boston, MA, 2000

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