THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel
Author:
Affiliation:
1. Nanyang Technological University,UMI3288 CINTRA, (CNRS/NTU/THALES),Singapore
2. Nanyang Technological University,Temasek Laboratories,Singapore
3. University of Salamanca,Applied Physics Department and USAL-NANOLAB,Spain
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10289089.pdf?arnumber=10289089
Reference15 articles.
1. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
2. High Field Transport Studies of GaN
3. SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION
4. Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode
5. Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode
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