SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION-Reference-Cited by-同舟云学术

SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION

Published:2009-03 Issue:01 Volume:19 Page:1-6
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

ASLAN BARBAROS¹,EASTMAN LESTER F.²,DIDUCK QUENTIN³

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, 424 Phillips Hall, Ithaca, NY 14853, USA

2. School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA

3. School of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, USA

Abstract

A GaN based negative differential conductivity diode utilizing transient ballistic transport effects is proposed and large-signal circuit simulations along with preliminary experimental results are presented. The diode is an n +- n - n + structure and transport is described by an empirical velocity-field relation which is derived directly from femtosecond pulse-probe measurements available in literature and incorporated into the simulations through curve fitting. Efficient THz generation is predicted as a result of ~2.8 peak-to-valley ratio. Pulsed current-voltage characteristics were measured and N -type dependence was observed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156409006035

Reference8 articles.

1. Single-mode operation of terahertz quantum cascade lasers with distributed feedback resonators

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