Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements-Reference-Cited by-同舟云学术

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Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

Published:2024 Issue: Volume: Page:1-0
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Sánchez-Martín Héctor¹^ORCID,Nunes Luís Cótimos²^ORCID,Íñiguez-de-la-Torre Ignacio¹^ORCID,Pérez-Martín Elsa¹^ORCID,Pérez Susana¹^ORCID,Mateos Javier¹^ORCID,González Tomás¹^ORCID,Pedro José Carlos²^ORCID

Affiliation:

1. Applied Physics Department and USAL-NANOLAB, Universidad de Salamanca, Salamanca, Spain

2. Departamento de Eletrónica, Telecomunicações e Informática (DETI), Instituto de Telecomunicações, Universidade de Aveiro, Aveiro, Portugal

Funder

MCIN/AEI/10

Junta de Castilla y León and Fondo Europeo de Desallorrollo Regional

Spanish Ministry of Science and Innovation through the Margarita Salas

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/22/4359079/10527363.pdf?arnumber=10527363

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