Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1644925
Reference23 articles.
1. Low dielectric constant materials for microelectronics
2. Interaction of positron beams with surfaces, thin films, and interfaces
3. Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant
4. Doppler broadening positron annihilation spectroscopy: A technique for measuring open-volume defects in silsesquioxane spin-on glass films
5. Determination of pore-size distribution in low-dielectric thin films
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