Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant-Reference-Cited by-同舟云学术

Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant

Published:1999-09-15 Issue:6 Volume:86 Page:3104-3109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Petkov Mihail P.,Weber Marc H.,Lynn Kelvin G.,Rodbell Kenneth P.,Cohen Stephan A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.371174

Reference11 articles.

1. VLSI on-chip interconnection performance simulations and measurements

2. Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

3. Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide

4. Preparation Of Low-Density Xerogels At Ambient Pressure For Low K Dielectrics

5. Influence of the Cure Process on the Properties of Hydrogen Silsesquioxane Spin-On-Glass

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