Polarity inversion of GaN films by trimethyl–aluminum preflow in low-pressure metalorganic vapor phase epitaxy growth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
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3. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
4. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
5. Changes in the growth mode of low temperature GaN buffer layers with nitrogen plasma nitridation of sapphire substrates
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3. Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor‐Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies;physica status solidi (b);2020-04
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