Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance-Reference-Cited by-同舟云学术

Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

Published:2015-01-12 Issue:2 Volume:106 Page:023502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jia Junjun,Torigoshi Yoshifumi,Kawashima Emi,Utsuno Futoshi,Yano Koki,Shigesato Yuzo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905654

Reference13 articles.

1. In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

2. High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer

3. Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

4. In situ analyses on negative ions in the sputtering process to deposit Al-doped ZnO films

5. Electronic State of Amorphous Indium Gallium Zinc Oxide Films Deposited by DC Magnetron Sputtering with Water Vapor Introduction

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