In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4812668
Reference24 articles.
1. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
2. Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
3. Circuits using uniform TFTs based on amorphous In-Ga-Zn-O
4. Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing
5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
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