Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108605
Reference17 articles.
1. Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers
2. Growth and characterization of single‐heterostructure AlGaAs/InGaP red light‐emitting diodes by liquid‐phase epitaxy
3. Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
4. Tellurium and zinc doping in In0.5Ga0.5P grown by liquid‐phase epitaxy
5. The site distribution of amphoteric dopants in multiply-doped GaAs
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