Relation between lattice strain and anomalous oxygen precipitation in a Czochralski‐grown silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359036
Reference17 articles.
1. Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers
2. Application of Copper-Decoration Method to Characterize As-Grown Czochralski-Silicon
3. Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
4. Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
5. Ring‐distribution of oxygen precipitates in Czochralski silicon revealed by low‐temperature infrared absorption spectroscopy
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1. Study on defects in EMCZ-Si crystal by infrared light scattering tomography;Journal of Crystal Growth;2000-01
2. Recent Progress in X-ray Topography for Silicon Materials;Japanese Journal of Applied Physics;1999-01-01
3. High-resolution X-ray topographic images of dislocations in a silicon crystal recorded using an X-ray zooming tube;Journal of Synchrotron Radiation;1998-05-01
4. Plane‐Wave X‐Ray Topography Using Imaging Plates and Its Application to Characterization of Lattice Distortion in As‐Grown Silicon;Journal of The Electrochemical Society;1997-11-01
5. The Effect of Pressure on the Concentration of Thermal Donors in Czochralski Grown Silicon;physica status solidi (b);1996-11-01
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