Ring‐distribution of oxygen precipitates in Czochralski silicon revealed by low‐temperature infrared absorption spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110181
Reference7 articles.
1. Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers
2. Thermodynamic and kinetic considerations on the equilibrium shape for thermally induced microdefects in Czochralski silicon
3. A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption
4. Precipitation and redistribution of oxygen in Czochralski‐grown silicon
5. Infrared absorption spectra of SiO2precipitates of various shapes in silicon: calculated and experimental
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2. Oxygen precipitates distributed around random grain boundaries in a cast-grown multicrystalline silicon crystal;Japanese Journal of Applied Physics;2016-03-15
3. Infrared spectrometric measurement of impurities in highly enriched ‘Si28’;Metrologia;2011-03-22
4. Quantitative Evaluation of Precipitated Oxygen in Silicon by Infrared Spectroscopy: Still an Open Problem;Journal of The Electrochemical Society;1998-05-01
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