Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2234841
Reference16 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
3. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
4. NonpolarInxGa1−xN/GaN(11¯00)multiple quantum wells grown onγ−LiAlO2(100)by plasma-assisted molecular-beam epitaxy
5. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
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