Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1630696
Reference34 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Multi-component high-K gate dielectrics for the silicon industry
3. Thermodynamic stability of binary oxides in contact with silicon
4. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
5. Atomic layer epitaxy
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