Author:
Manchanda L,Morris M.D,Green M.L,van Dover R.B,Klemens F,Sorsch T.W,Silverman P.J,Wilk G,Busch B,Aravamudhan S
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. The electronic structure of the atomic scale of ultra-thin gate oxides;Muller;Nature,1999
2. International Technology Roadmap for Semiconductors, 1999 (revised 2000).
3. Gate quality doped high K films for CMOS beyond 100 nm. 3–10 nm Al2O3 with low leakage and low interface states;Manchanda;IEDM Digest,1998
4. High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 0.5–1 nm;Chin;VLSI Technol. Symp. Digest,2000
5. 80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications;Buchanan;IEDM Technical Digest,2000
Cited by
115 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献