Amorphization and regrowth in Si/CoSi2/Si heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346977
Reference16 articles.
1. Mesotaxy: Single‐crystal growth of buried CoSi2layers
2. Mesotaxy: Single‐crystal growth of buried CoSi2layers
3. Mesotaxy: Single‐crystal growth of buried CoSi2layers
4. Mesotaxy: Single‐crystal growth of buried CoSi2layers
5. Crystalline disorder reduction and defect‐type change in silicon on sapphire films by silicon implantation and subsequent thermal annealing
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1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11
2. Ion‐Induced Amorphization and Regrowth of C49 and C54 TiSi2;Journal of The Electrochemical Society;1999-03-01
3. Topics in solid phase epitaxy: Strain, structure and geometry;Materials Science and Engineering: R: Reports;1996-01
4. Microstructural studies of epitaxial CoSi2layers on silicon produced by ion beam synthesis and rapid thermal annealing;Journal of Applied Physics;1993-12-15
5. Formation and characterization of epitaxial CoSi2 on Si(001);Applied Surface Science;1993-11
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