Microstructural studies of epitaxial CoSi2layers on silicon produced by ion beam synthesis and rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355029
Reference18 articles.
1. Mesotaxy: Single‐crystal growth of buried CoSi2layers
2. Buried Silicide Synthesis and Strain in Cobalt-Implanted Silicon
3. Sputtering of (100) Si by 350 keV Co implantation
4. Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si
5. Formation of buried epitaxial Co silicides by ion implantation
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2. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer;Journal of Applied Physics;2001-06-15
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