Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer-Reference-Cited by-同舟云学术

Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer

Published:2001-06-15 Issue:12 Volume:89 Page:7841-7845
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chun J.-S.,Desjardins P.,Lavoie C.,Shin C.-S.,Cabral C.,Petrov I.,Greene J. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1372162

Reference9 articles.

1. Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers

2. Dense fully 111-textured TiN diffusion barriers: Enhanced lifetime through microstructure control during layer growth

3. Film property comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques

4. Use of an externally applied axial magnetic field to control ion/neutral flux ratios incident at the substrate during magnetron sputter deposition

5. Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties

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