Film property comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques-Reference-Cited by-同舟云学术

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Film property comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques

Published:1996-05 Issue:3 Volume:14 Page:1837
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wang Shi-Qing

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced Thin Films;Introduction to Microfabrication;2010-11-09

2. Interfacial reaction pathways and kinetics during annealing of 111-textured Al/TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-09

3. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer;Journal of Applied Physics;2001-06-15

4. Applications and properties of ionized physical vapor deposition films;Ionized physical vapor deposition;2000

5. Properties of titanium nitride film deposited by ionized metal plasma source;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

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