Dopants effects on the interfacial reaction between Co and strained Si0.8Ge0.2 layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366932
Reference20 articles.
1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
2. Reduction of the Barrier Height of Silicide/p-Si1-xGexContact for Application in an Infrared Image Sensor
3. Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors
4. Silicides for integrated circuits: TiSi2 CoSi2
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The reaction of Co and Si1−xGex for MOSFET with poly-Si1−xGex gate;Materials Chemistry and Physics;2001-03
2. Electrical and Compositional Properties of Co-Silicided Shallow p[sup +]-n Junction Using Si-Capped/Boron-Doped Si[sub 1−x]Ge[sub x] Layer Deposited by UHVCME;Journal of The Electrochemical Society;2001
3. Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1−xGex structures;Journal of Applied Physics;2000-08-15
4. Study of boron effects on the reaction of Co and Si1−xGex at various temperatures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-07
5. Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1−xGex/Si heterostructure;Materials Science in Semiconductor Processing;1998-12
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