The reaction of Co and Si1−xGex for MOSFET with poly-Si1−xGex gate
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Deposition and device application ofinsituboron‐doped polycrystalline SiGe films grown at low temperatures
2. P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
3. A self-aligned CoSi2interconnection and contact technology for VLSI applications
4. Self-aligned silicides or metals for very large scale integrated circuit applications
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1. Enhanced formation and morphological stability of low-resistivity CoSi2 nanodot arrays on epitaxial Si0.7Ge0.3 virtual substrate;Materials Chemistry and Physics;2011-10
2. Rapid Thermal Processing;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09
3. Thermoelectric properties of the CoSi1−xGex alloys;Journal of Applied Physics;2005-12-15
4. New salicidation technology PtSi for strained SiGe device;Microelectronic Engineering;2005-03
5. Solid-phase reaction and Schottky contact properties of Co/n-poly-Si[sub 0.84]Ge[sub 0.16]/n-Si (100);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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