P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System-Reference-Cited by-同舟云学术

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P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

Published:1999-10-01 Issue:Part 2, No. 10A Volume:38 Page:L1099-L1101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Kun-Ming,Huang Hsiang-Jen,Huang Guo-Wei,Chang Chun-Yen,Chen Liang-Po

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nano-Scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation;IEEE Transactions on Semiconductor Manufacturing;2021-08

2. Effect of silicidation on the electrical characteristics of polycrystalline-SiGe Schottky diode;Thin Solid Films;2006-05

3. Solid-phase reaction and Schottky contact properties of Co/n-poly-Si[sub 0.84]Ge[sub 0.16]/n-Si (100);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

4. The reaction of Co and Si1−xGex for MOSFET with poly-Si1−xGex gate;Materials Chemistry and Physics;2001-03

5. Low frequency noise in boron doped poly-SiGe resistors;2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)

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