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Study of boron effects on the reaction of Co and Si1−xGex at various temperatures

  • Published:2000-07 Issue:4 Volume:18 Page:1448-1454
  • ISSN:0734-2101
  • Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
  • language:en
  • Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Huang H. J.,Chen K. M.,Chang C. Y.,Huang T. Y.,Chang T. C.,Chen L. P.,Huang G. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer;Thin Solid Films;2010-10

2. Electronic structure of Co (Si, Ge) compounds: Ab-initio calculation;Physica B: Condensed Matter;2008-10

3. Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06

4. Solid-phase reaction and Schottky contact properties of Co/n-poly-Si[sub 0.84]Ge[sub 0.16]/n-Si (100);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

5. Enhanced growth of low-resistivity NiSi on epitaxial Si[sub 0.7]Ge[sub 0.3] on (001)Si with a sacrificial amorphous Si interlayer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
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