Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1−xGex/Si heterostructure-Reference-Cited by-同舟云学术

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Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1−xGex/Si heterostructure

Published:1998-12 Issue:3-4 Volume:1 Page:257-261
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Miron Y,Efrati Fastow M,Cytermann C,Brener R,Eizenberg M,Glück M,Kibbel H,König U

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Solid solubility and diffusion of boron in single‐crystalline cobalt disilicide

2. Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications

3. Strain characterization of CoSi2/n‐Si0.9Ge0.1/p‐Si heterostructures

4. CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion

5. Dopants effects on the interfacial reaction between Co and strained Si0.8Ge0.2 layers

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(0 0 1) and epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) structures;Applied Surface Science;2004-10

2. Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer;Thin Solid Films;2004-06

3. Formation and Properties of Epitaxial CoSi2Layers on p-Si0.83Ge0.17/p-Si(001) using a Si Capping Layer by Metal-Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2003-06-15

4. Electrical and Compositional Properties of Co-Silicided Shallow p[sup +]-n Junction Using Si-Capped/Boron-Doped Si[sub 1−x]Ge[sub x] Layer Deposited by UHVCME;Journal of The Electrochemical Society;2001

5. Co silicide formation on epitaxial Si1−yCy/Si (001) layers;Journal of Applied Physics;2000-04

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