The role of substrate quality on misfit dislocation formation in pseudomorphic high electron mobility transistor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364346
Reference22 articles.
1. Role of misfit dislocations on pseudomorphic high electron mobility transistors
2. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
3. Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures
4. Defects in epitaxial multilayers
5. Nucleation of misfit dislocations in strained-layer InGaAs on GaAs
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