Nucleation of misfit dislocations in strained-layer InGaAs on GaAs
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839008215049
Reference13 articles.
1. X‐ray topography of the coherency breakdown in GexSi1−x/Si(100)
2. Composition and lattice‐mismatch measurement of thin semiconductor layers by x‐ray diffraction
3. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
4. A new type of source generating misfit dislocations
5. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
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