Effect of Si doping on the relaxation mechanism of InGaAs on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1513181
Reference11 articles.
1. Dislocations in strained-layer epitaxy: theory, experiment, and applications
2. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
3. Nucleation of misfit dislocations in strained-layer InGaAs on GaAs
4. An MBE growth facility for real‐time in situ synchrotron x‐ray topography studies of strained‐layer III–V epitaxial materials
5. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
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2. Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures;Materials Science in Semiconductor Processing;2020-12
3. Anisotropic strain relaxation of Si-doped metamorphic InAlAs graded buffers on InP;Journal of Physics D: Applied Physics;2017-08-30
4. Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates;Applied Surface Science;2014-01
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