Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2927498
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1. Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs;Journal of Materials Science;2023-06
2. Crystal lattice tilt analysis in gradient composition layers by electron and X-ray diffraction;Journal of Physics: Conference Series;2019-12-01
3. Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction;Japanese Journal of Applied Physics;2017-07-18
4. Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE;Crystal Growth & Design;2016-03-24
5. Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures;Semiconductors;2013-04
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