Properties of GaP(001) surfaces thermally annealed in dry N2 atmosphere
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2919572
Reference36 articles.
1. Surface Processing of III-V Semiconductors
2. Photoemission characterization of the H2plasma etched surface of InP
3. Hydrogen plasma passivation of InP: Real time ellipsometry monitoring and ex situ photoluminescence measurements
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5. III–V surface plasma nitridation: A challenge for III–V nitride epigrowth
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1. Optical constants and origin of the absorption edge of GaPN lattice-matched to Si;Physical Review B;2018-08-16
2. Deoxidation of (001) III–V semiconductors in metal-organic vapour phase epitaxy;Journal of Applied Physics;2016-08-28
3. Investigation of rapid thermally annealed GaP(001) surfaces in vacuum;Surface and Interface Analysis;2010-01-04
4. Structural and optical properties of GaAs(001) surfaces thermally annealed in dry N2 atmosphere;Journal of Applied Physics;2009-06-15
5. Properties of GaAs(001) surfaces thermally annealed in vacuum;Journal of Applied Physics;2009-02-15
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