Structural and optical properties of GaAs(001) surfaces thermally annealed in dry N2 atmosphere
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3153978
Reference34 articles.
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1. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30
2. Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium;Semiconductors;2017-05
3. Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces;Progress in Crystal Growth and Characterization of Materials;2016-12
4. Deoxidation of (001) III–V semiconductors in metal-organic vapour phase epitaxy;Journal of Applied Physics;2016-08-28
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