Dielectric and conducting properties of unintentionally and Sn-doped β-Ga2O3 studied by terahertz spectroscopy
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
2. Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
Funder
Operational Programme Research, Development and Education, financed by European Structural and Investment Funds and the Czech Ministry of Education
National Science Foundation
Grantová Agentura České Republiky
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5143735
Reference37 articles.
1. Intrinsic electron mobility limits inβ-Ga2O3
2. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs
3. Lateral β-Ga2O3 field effect transistors
4. High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate
5. Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors
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