Anisotropic Electron Mobility and Contact Resistance of β-Ga<sub>2</sub>O<sub>3</sub> Obtained via Radio Frequency Transmission Line Methods on Schottky Devices-Reference-Cited by-同舟云学术

Anisotropic Electron Mobility and Contact Resistance of β-Ga₂O₃ Obtained via Radio Frequency Transmission Line Methods on Schottky Devices

Published:2024-03-08 Issue:11 Volume:18 Page:8546-8554
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Hyun-Jung¹,Hong Sungjae¹,Jang Chorom²,Jin Hye-Jin¹,Woo Haneul²^ORCID,Bae Heesun¹^ORCID,Im Seongil¹^ORCID

Affiliation:

1. Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

Funder

National Research Foundation of Korea

Yonsei University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c01813

Reference46 articles.

1. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

2. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

3. Flexible β‐Ga 2 O 3 Nanomembrane Schottky Barrier Diodes

4. Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation

5. RF Performance Investigation of β-Ga2O3/Graphene and β-Ga2O3/Black Phosphorus Heterostructure MOSFETs

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