Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation-Reference-Cited by-同舟云学术

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Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation

Published:2020-11 Issue:11 Volume:67 Page:4813-4819
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Joishi Chandan^ORCID,Xia Zhanbo^ORCID,Jamison John S.,Sohel Shahadat H.^ORCID,Myers Roberto C.^ORCID,Lodha Saurabh^ORCID,Rajan Siddharth

Funder

National Science Foundation

Department of Defense-Defense Threat Reduction Agency

ONR EXEDE MURI Program

OSU Institute for Materials Research Seed Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/9237191/9207845-aam.pdf

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2 in. Bulk β-Ga₂O₃ Single Crystals Grown by EFG Method with High Wafer-Scale Quality;ACS Omega;2024-04-24

2. Anisotropic Electron Mobility and Contact Resistance of β-Ga₂O₃ Obtained via Radio Frequency Transmission Line Methods on Schottky Devices;ACS Nano;2024-03-08

3. Demonstration of MOCVD based in situ etching of β-Ga2O3 using TEGa;Journal of Applied Physics;2024-02-20

4. Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET;Semiconductor Science and Technology;2024-02-07

5. Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications;Materials;2023-12-18

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