X‐ray diffraction analysis of Si1−xGex/Si superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351423
Reference9 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
3. Demonstration of a p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system
4. Strained‐layer superlattices from lattice mismatched materials
5. A new scheme for x‐ray grazing incidence diffraction
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Si/Si1 − x Gex Superlattice Structure from X-ray-Scattering Data;Russian Microelectronics;2005-07
2. A Novel Method of Analyzing Peak Broadening Due to Mosaicity for Cubic Crystals on (001) Substrate using Double-Crystal X-ray Diffraction Methods;Journal of Applied Crystallography;1997-12-01
3. Structural analysis of imperfect GeSi superlattices grown on Ge(001) substrates;Journal of Applied Physics;1995-07
4. X‐ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor‐phase epitaxy;Journal of Applied Physics;1994-03
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