Author:
Yakunin S. N.,Pashaev E. M.,Zaitsev A. A.,Subbotin I. A.,Rzaev M. M.,Imamov R. M.
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Baribeau, J.-M., X-ray Double-Crystal Characterization of Molecular Beam Epitaxially Grown Si/Si1 − x Gex Strained-Layer Superlattices, Appl. Phys. Lett., 1988, vol. 52, no.2, pp. 105–107.
2. Fatemi, M. and Stahlbush, R.E., X-ray Rocking Curve Measurement of Composition and Strain in Si-Ge Buffer Layers Grown on Si Substrates, Appl. Phys. Lett., 1991, vol. 58, no.8, pp. 825–827.
3. Mai, Z.H., et al., X-ray Diffraction Analysis of Si1 − x Gex/Si Superlattices, J. Appl. Phys., 1992, vol. 72, no.8, pp. 3474–3479.
4. Fisher, G.G. and Zaumseil, P., In Situ X-ray Investigation of the High-Temperature Behaviour of Strained Si1 − x Gex/Si and Si1 − y Gey/Si Heterostructures, J. Phys. D: Appl. Phys., 1995, vol. 28, pp. A109–A113.
5. Avrutin, V.S., Zaitsev, A.A., Kartsev, A.T., Pashaev, E.M., and Tikhomirov, S.A., Structural Characterization of Isomorphic Heterojunction Multilayers Based on MBE-Grown Si1 − x Gex/Si, Izv. Vyssh. Uchebn. Zaved., Elektron., 1998, no. 4, pp. 11–16.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献