Low‐temperature growth of GexSi1−x/Si heterostructures on Si(100) by remote plasma‐enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105272
Reference8 articles.
1. Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition
2. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
3. Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
4. The use of langmuir probe measurements to investigate the reaction mechanisms of remote plasma-enhanced chemical vapor deposition
5. Defect microstructure in low temperature epitaxial silicon grown by RPCVD
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