Charge trapping centers in N‐rich silicon nitride thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108222
Reference12 articles.
1. Hydrogen‐Implanted Silicon Nitride
2. Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?
3. Dangling Bonds in Memory‐Quality Silicon Nitride Films
4. Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films
5. Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films
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