Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102514
Reference15 articles.
1. The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structures
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3. Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
4. First observation of the29Si hyperfine spectra of silicon dangling bond centers in silicon nitride
5. States in the Gap in Glassy Semiconductors
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